Hafnium Oxide Sputtering Targets

HfO₂

Hafnium-based thin films are used as an insulator in the latest generations of semiconductors. The thin film prevents copper diffusion into silicon. Amorphous Hafnium Oxide has a high dielectric constant; it reduces the gate leakage current and improves performance of the electronics. Hafnium thin film coating can also be used to provide surface hardness and protection. 

         Specifications:

                    Material Type:                          Hafnium Oxide

                    Symbol:                                     HfO₂

                    Color/Appearance:                 White, Crystalline Solid

                    Molar Mass:                              210.49 g/mol

                    Melting Point:                          2,758^oC

                    Boiling Point:                           5,400^oC

                    Theoretical Density :              9.68 gm/cm³

                    Z Ratio:                                      **1.00

                    Sputter:                                    RF, RF-R

                    Max Power Density:               20 W/in²*

                    Type of Bond:                         Indium, Elastomer

                    Export Control (ECCN):         1C231

This item may require a US Export License for international sales.

Available Purity:                   99%, 99.9%, 99.99%

Available Shape/Forms:     Discs, Rectangle, Rods, Pellets, Irregular, Custom-Made

Available Dimensions:

Discs: Diameter (≤480 mm), Thickness (≥0.5 mm)

Rectangle: Length (≤400 mm), Width (≤300 mm), Thickness (≥1 mm)

* The ratings are based on unbonded targets and are material specific. Bonded targets should be run at lower powers to prevent bonding failures. Bonded targets should be run at 20 Watts/Square Inch or lower, depending on the material.

** The z-ratio is unknown. Therefore, we recommend using 1.00 or an experimentally determined value.